Correlation Engine 2.0
Clear Search sequence regions

Sizes of these terms reflect their relevance to your search.

Recent advances in information technology require higher-speed and higher-density memory devices. In the past decade, resistance switching memory has emerged as a powerful alternative to existing charge-storage-based, non-volatile devices. Despite the extensive research, much of the underlying switching/conduction mechanism is still unknown and controversial. The versatile capability of scanning probe microscopy (SPM) has extended the understanding of resistive switching significantly. This review summarizes the recent advances in understanding on the mechanism of resistive switching effects with particular focus on SPM based observations. In addition, the tip-sample interfacial effects and resulting possible artefacts during scanning probe measurements are discussed.


Min Hwan Lee, Cheol Seong Hwang. Resistive switching memory: observations with scanning probe microscopy. Nanoscale. 2011 Feb;3(2):490-502

Expand section icon Mesh Tags

Expand section icon Substances

PMID: 21109878

View Full Text