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Spatial maps of topography and trapped charge are acquired for polycrystalline pentacene thin-film transistors using electric and atomic force microscopy. In regions of trapped charge, the rate of trap clearing is studied as a function of the wavelength of incident radiation.

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Justin L Luria, Kathleen A Schwarz, Michael J Jaquith, Richard G Hennig, John A Marohn. Spectroscopic characterization of charged defects in polycrystalline pentacene by time- and wavelength-resolved electric force microscopy. Advanced materials (Deerfield Beach, Fla.). 2011 Feb 1;23(5):624-8

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PMID: 21274909

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