Correlation Engine 2.0
Clear Search sequence regions

Sizes of these terms reflect their relevance to your search.

Using a 820 nm-thick high-quality Ge0.97Sn0.03 alloy film grown on Si(001) by molecular beam epitaxy, GeSn p-i-n photodectectors have been fabricated. The detectors have relatively high responsivities, such as 0.52 A/W, 0.23 A/W, and 0.12 A/W at 1310 nm, 1540 nm, and 1640 nm, respectively, under a 1 V reverse bias. With a broad detection spectrum (800-1800 nm) covering the whole telecommunication windows and compatibility with conventional complementary metal-oxide-semiconductors (CMOS) technology, the GeSn devices are attractive for applications in both optical communications and optical interconnects.


Shaojian Su, Buwen Cheng, Chunlai Xue, Wei Wang, Quan Cao, Haiyun Xue, Weixuan Hu, Guangze Zhang, Yuhua Zuo, Qiming Wang. GeSn p-i-n photodetector for all telecommunication bands detection. Optics express. 2011 Mar 28;19(7):6400-5

Expand section icon Mesh Tags

Expand section icon Substances

PMID: 21451667

View Full Text