GeSn p-i-n photodetector for all telecommunication bands detection.

Shaojian Su, Buwen Cheng, Chunlai Xue, Wei Wang, Quan Cao, Haiyun Xue, Weixuan Hu, Guangze Zhang, Yuhua Zuo, Qiming Wang

State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, China.

Optics express 2011 Mar 28

filter terms:

Using a 820 nm-thick high-quality Ge0.97Sn0.03 alloy film grown on Si(001) by molecular beam epitaxy, GeSn p-i-n photodectectors have been fabricated. The detectors have relatively high responsivities, such as 0.52 A/W, 0.23 A/W, and 0.12 A/W at 1310 nm, 1540 nm, and 1640 nm, respectively, under a 1 V reverse bias. With a broad detection spectrum (800-1800 nm) covering the whole telecommunication windows and compatibility with conventional complementary metal-oxide-semiconductors (CMOS) technology, the GeSn devices are attractive for applications in both optical communications and optical interconnects.

Citation

Shaojian Su, Buwen Cheng, Chunlai Xue, Wei Wang, Quan Cao, Haiyun Xue, Weixuan Hu, Guangze Zhang, Yuhua Zuo, Qiming Wang. GeSn p-i-n photodetector for all telecommunication bands detection. Optics express. 2011 Mar 28;19(7):6400-5