Ultracompact polarization converter with a dual subwavelength trench built in a silicon-on-insulator waveguide.

The design and fabrication of an ultracompact silicon-on-insulator polarization converter is reported. The polarization conversion with an extinction ratio of 16 dB is achieved for a conversion length of only 10 μm. Polarization rotation is achieved by inducing a vertical asymmetry by forming in the waveguide core two subwavelength trenches of different depths. By taking advantage of the calibrated reactive ion etch lag, the two depths are implemented using a single mask and etching process. The measured converter loss is -0.7 dB and the 3 dB bandwidth is 26 nm.

Citation

Aitor V Velasco, María L Calvo, Pavel Cheben, Alejandro Ortega-Moñux, Jens H Schmid, Carlos Alonso Ramos, Iñigo Molina Fernandez, Jean Lapointe, Martin Vachon, Siegfried Janz, Dan-Xia Xu. Ultracompact polarization converter with a dual subwavelength trench built in a silicon-on-insulator waveguide. Optics letters. 2012 Feb 1;37(3):365-7

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PMID: 22297354

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