On the simple random-walk models of ion-channel gate dynamics reflecting long-term memory.

Several approaches to ion-channel gating modelling have been proposed. Although many models describe the dwell-time distributions correctly, they are incapable of predicting and explaining the long-term correlations between the lengths of adjacent openings and closings of a channel. In this paper we propose two simple random-walk models of the gating dynamics of voltage and Ca(2+)-activated potassium channels which qualitatively reproduce the dwell-time distributions, and describe the experimentally observed long-term memory quite well. Biological interpretation of both models is presented. In particular, the origin of the correlations is associated with fluctuations of channel mass density. The long-term memory effect, as measured by Hurst R/S analysis of experimental single-channel patch-clamp recordings, is close to the behaviour predicted by our models. The flexibility of the models enables their use as templates for other types of ion channel.

Citation

Agata Wawrzkiewicz, Krzysztof Pawelek, Przemyslaw Borys, Beata Dworakowska, Zbigniew J Grzywna. On the simple random-walk models of ion-channel gate dynamics reflecting long-term memory. European biophysics journal : EBJ. 2012 Jun;41(6):505-26

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PMID: 22484857

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