Epitaxy of nanocrystalline silicon carbide on Si(111) at room temperature.

Roberto Verucchi, Lucrezia Aversa, Marco V Nardi, Simone Taioli, Silvio a Beccara, Dario Alfè, Lucia Nasi, Francesca Rossi, Giancarlo Salviati, Salvatore Iannotta

Istituto dei Materiali per l'Elettronica ed il Magnetismo, IMEM-CNR, Sezione FBK di Trento, 38123 Trento, Italy. roberto.verucchi@cnr.it

Journal of the American Chemical Society 2012 Oct 24

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Silicon carbide (SiC) has unique chemical, physical, and mechanical properties. A factor strongly limiting SiC-based technologies is the high-temperature synthesis. In this work, we provide unprecedented experimental and theoretical evidence of 3C-SiC epitaxy on silicon at room temperature by using a buckminsterfullerene (C(60)) supersonic beam. Chemical processes, such as C(60) rupture, are activated at a precursor kinetic energy of 30-35 eV, far from thermodynamic equilibrium. This result paves the way for SiC synthesis on polymers or plastics that cannot withstand high temperatures.

Citation

Roberto Verucchi, Lucrezia Aversa, Marco V Nardi, Simone Taioli, Silvio a Beccara, Dario Alfè, Lucia Nasi, Francesca Rossi, Giancarlo Salviati, Salvatore Iannotta. Epitaxy of nanocrystalline silicon carbide on Si(111) at room temperature. Journal of the American Chemical Society. 2012 Oct 24;134(42):17400-3