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The unique anisotropic wet-etching mechanism of a (111) silicon wafer facilitates the highly controllable top-down fabrication of silicon nanowires (SiNWs) with conventional microfabrication technology. The fabrication process is compatible with the surface manufacturing technique, which is employed to build a nanowire-based field-effect transistor structure on the fabricated SiNW. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.


Xiao Yu, Yuchen Wang, Hong Zhou, Yanxiang Liu, Yi Wang, Tie Li, Yuelin Wang. Top-down fabricated silicon-nanowire-based field-effect transistor device on a (111) silicon wafer. Small (Weinheim an der Bergstrasse, Germany). 2013 Feb 25;9(4):525-30

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PMID: 23143874

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