Measuring the refractive index around intersubband transition resonance in GaN/AlN multi quantum wells.

Elad Gross, Amir Nevet, Asaf Pesach, Eva Monroy, Shmuel E Schacham, Meir Orenstein, Mordechai Segev, Gad Bahir

Department of electrical engineering, Technion-Israel Institute of Technology, Haifa 32000, Israel. eladg1@tx.technion.ac.il

Optics express 2013 Feb 11

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We present the direct measurement of the refractive index distribution (spectral dispersion) arising from an intersubband transition in GaN/AlN multi quantum wells structure. The measurement is carried out through a novel interferometric technique. The measured interferogram yields a change in the refractive index varying from -5 × 10(-3) to 6 × 10(-3) as a function of the wavelength, introduced by the intersubband resonance at 1.5 µm. These results compare well with those derived using Kramers-Kronig transform of the measured absorption spectrum.

Citation

Elad Gross, Amir Nevet, Asaf Pesach, Eva Monroy, Shmuel E Schacham, Meir Orenstein, Mordechai Segev, Gad Bahir. Measuring the refractive index around intersubband transition resonance in GaN/AlN multi quantum wells. Optics express. 2013 Feb 11;21(3):3800-8