Characterization of edge oscillation in a traveling-wave field-effect transistor.

In this study, we characterize the oscillating pulse edges developed in a traveling-wave field-effect transistor (TWFET). Recently, it has been found that a stable shock front can develop on a TWFET, which can travel in one direction only. Once the reflected pulse edge at the far end is transmitted to the input, the shock front develops and begins to travel on the device again. This process establishes a permanent edge oscillation. This paper discusses the device setup necessary to excite such oscillations and how pulse edges oscillate on a TWFET. By applying the phase reduction scheme to the transmission equations of a TWFET, we obtain phase sensitivity, which appropriately explains the measured spatial dependence of the locking range in frequency. Moreover, multiple oscillating edges can develop simultaneously, which are mutually synchronized. The dynamics of these multiple edges are also described.

Citation

Koichi Narahara. Characterization of edge oscillation in a traveling-wave field-effect transistor. Physical review. E, Statistical, nonlinear, and soft matter physics. 2013 Jul;88(1-1):012907

PMID: 23944538

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