Rong Zhang, Antimo Marrazzo, Matthieu Jean Verstraete, Nicola Marzari, Thibault Daniel Pierre Sohier
Nano letters 2021 Sep 22A recent 2D spinFET concept proposes to switch electrostatically between two separate sublayers with strong and opposite intrinsic Rashba effects, exploiting the spin-layer-locking mechanism in centrosymmetric materials with local dipole fields. Here, we propose a novel monolayer material within this family, lutetium oxide iodide (LuIO). It displays one of the largest Rashba effects among 2D materials (up to kR = 0.08 Å-1), leading to a π/2 rotation of the spins over just 1 nm. The monolayer was predicted to be exfoliable from its experimentally known 3D bulk counterpart, with a binding energy lower than graphene. We characterize and simulate the interplay of the two gate-controlled parameters for such devices: doping and spin channel selection. We show that the ability to split the spin channels in energy diminishes with doping, leading to specific gate-operation guidelines that can apply to all devices based on spin-layer locking.
Rong Zhang, Antimo Marrazzo, Matthieu Jean Verstraete, Nicola Marzari, Thibault Daniel Pierre Sohier. Gate Control of Spin-Layer-Locking FETs and Application to Monolayer LuIO. Nano letters. 2021 Sep 22;21(18):7631-7636
PMID: 34460271
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