Heterogeneous integration of Si photodiodes on silicon nitride for near-visible light detection.

Silicon nitride (SiN) is used extensively to complement the standard silicon photonics portfolio. However, thus far demonstrated light sources and detectors on SiN have predominantly focused on telecommunication wavelengths. Yet, to unlock the full potential of SiN, integrated photodetectors for wavelengths below 850 nm are essential to serve applications such as biosensing, imaging, and quantum photonics. Here, we report the first, to the best of our knowledge, microtransfer printed Si p-i-n photodiodes on a commercially available SiN platform to target wavelengths <850 nm. A novel heterogeneous integration process flow was developed to offer a high microtransfer printing yield. Moreover, these devices are fabricated with CMOS compatible and wafer-scale technology.

Citation

Stijn Cuyvers, Artur Hermans, Max Kiewiet, Jeroen Goyvaerts, Gunther Roelkens, Kasper Van Gasse, Dries Van Thourhout, Bart Kuyken. Heterogeneous integration of Si photodiodes on silicon nitride for near-visible light detection. Optics letters. 2022 Feb 15;47(4):937-940

Mesh Tags

Substances

PMID: 35167563

search → result