Silicon nitride assisted tri-layer edge coupler on lithium niobate-on-insulator platform.

Lithium niobate-on-insulator (LNOI) is a promising integration platform for various applications, such as optical communication, microwave photonics, and nonlinear optics. To make Lithium niobate (LN) photonic integrated circuits (PICs) more practical, low-loss fiber-chip coupling is essential. In this Letter, we propose and experimentally demonstrate a silicon nitride (SiN) assisted tri-layer edge coupler on LNOI platform. The edge coupler consists of a bilayer LN taper and an interlayer coupling structure composed of an 80 nm-thick SiN waveguide and an LN strip waveguide. The measured fiber-chip coupling loss for the TE mode is 0.75 dB/facet at 1550 nm. Transition loss between the SiN waveguide and LN strip waveguide is ∼0.15 dB. In addition, the fabrication tolerance of the SiN waveguide in the tri-layer edge coupler is high.

Citation

Zhiguo Yu, Yuxiang Yin, Xingrui Huang, Donghe Tu, Hang Yu, Huan Guan, Lei Jiang, Wei Yan, Zhiyong Li. Silicon nitride assisted tri-layer edge coupler on lithium niobate-on-insulator platform. Optics letters. 2023 Jul 01;48(13):3367-3370

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PMID: 37390132

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